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Same model may have multiple batches, images only for reference.
IPD144N06NGBTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD144N06NGBTMA1

Part No IPD144N06NGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO-252
Datasheet
IPD144N06NGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 80μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 1900pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 14.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 118137-IPD144N06NGBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD144N06NGBTMA1 CAD Model

Description

The Infineon Technologies IPD144N06NGBTMA1 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 136W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 14.4 mOhm @ 50A, 10V
  • Gate-Source Threshold Voltage: 4V @ 80μA
  • Maximum Gate Charge: 54nC @ 10V
  • Maximum Input Capacitance: 1900pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Mounting: SMD (SMT) technology
  • Package: PG-TO252-3
  • Supply and Demand Status: Balanced

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65+ $1.7959 $116.7335
100+ $1.7398 $173.9800
140+ $1.6837 $235.7180
180+ $1.6276 $292.9680
240+ $1.4592 $350.2080
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