The IPD200N15N3G is a OptiMOS™ power MOSFET from Infineon Technologies. It's designed for a wide range of applications requiring efficient power switching, particularly in automotive and industrial settings. This MOSFET is known for its low on-resistance and excellent thermal performance.

Applications:

• Automotive body control modules
• Automotive power distribution
• Industrial motor control
• DC-DC converters
• Battery management systems
• Power tools

Features:

• OptiMOS™ technology
• Very low on-resistance RDS(on)
• Logic level input
• 175°C operating temperature
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

Benefits:

• High efficiency: Very low RDS(on) minimizes conduction losses, leading to improved system efficiency.
• Reduced heat generation: Low RDS(on) reduces power dissipation and simplifies thermal management.
• Simplified gate drive: Logic level input allows for direct drive from microcontrollers and other logic devices.
• Robust performance: High operating temperature and avalanche rating ensure reliable operation under demanding conditions.
• Environmentally friendly: Pb-free and RoHS compliant, halogen-free.
• Automotive qualified: Suitable for use in demanding automotive applications.

Technical Specifications:

• Voltage Rating: 150V
• RDS(on) (at VGS=10V): 20 mΩ (typical)
• Continuous Drain Current (ID): 50A (at TC=25°C)
• Gate Charge (Qg): 30 nC (typical)
• Package: PG-TO252-3 (DPAK)
• Operating Temperature Range: -55°C to +175°C

The IPD200N15N3G provides a reliable and efficient solution for power switching applications. Refer to the official Infineon datasheet for the most current and detailed specifications.