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Same model may have multiple batches, images only for reference.
IPD20N03LG Real Image
Same model may have multiple batches, images only for reference.

IPD20N03LG

Part No IPD20N03LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A DPAK
Datasheet
IPD20N03LG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 25μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 695pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 068993-IPD20N03LG
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IPD20N03LG CAD Model

Description

The Infineon Technologies IPD20N03LG is a MOSFET designed for use in power management and industrial applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 30A @ 25°C
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 15A, 10V
  • Supply and Demand Status: Balanced

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