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IPD25DP06NMATMA1

Part No IPD25DP06NMATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 6.5A TO252-3 / P-Channel 60 V 6.5A (Tc) 28W (Tc) Surface Mount PG-TO252-3-313
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 30 V
Power Dissipation (Max) 28W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number IPD25DP06
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338015-IPD25DP06NMATMA1
Ultra Librarian 3D Model Ultra Librarian IPD25DP06NMATMA1 CAD Model

Description

The OptiMOS™ MOSFET (Metal Oxide) P-Channel FET is a high-performance electronic component that is designed to provide a drain to source voltage (Vdss) of 60V.

  • Maximum Power Dissipation: 28W (Tc)
  • Mounting Type: Surface Mount
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Vgs (Max): ±20V
  • Temperature Range: -55°C to 175°C (TJ)
  • Supplier Device Package: PG-TO252-3-313

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5865 $58.6500
240+ $0.4813 $115.5120
375+ $0.4663 $174.8625
515+ $0.4513 $232.4195
665+ $0.4361 $290.0065
890+ $0.3911 $348.0790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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