The OptiMOS™ MOSFET is a single N-Channel FET designed for high-performance applications.

• GPTDescription: With a drain to source voltage (Vdss) of 55V and a continuous drain current (Id) of 30A @ 25°C, this MOSFET offers reliable power management capabilities.
• GPTDescription: The maximum on-resistance (Rds On) is 20mOhm @ 17A and 10V, ensuring efficient power delivery.
• GPTDescription: The OptiMOS™ series is known for its high power dissipation capacity of 45W (Tc).
• GPTDescription: This MOSFET is surface mountable and comes in a TO-252-3, DPak package.
• GPTDescription: The gate charge (Qg) is 37nC @ 10V, and the input capacitance (Ciss) is 2600pF @ 25V.
• GPTDescription: The MOSFET can operate @ a temperature range of -55°C to 175°C, making it suitable for various electronic applications.
• GPTDescription: It is an active product from Infineon Technologies, a reputable manufacturer in the industry.
• GPTDescription: Drive voltage requirements include a maximum Rds On of 5V and a minimum Rds On of 10V.