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Same model may have multiple batches, images only for reference.
IPD30N08S2L-21 Real Image
Same model may have multiple batches, images only for reference.

IPD30N08S2L-21

Part No IPD30N08S2L-21
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186129-IPD30N08S2L-21
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD30N08S2L-21 CAD Model

Description

The Infineon Technologies IPD30N08S2L-21 is a commonly used N-channel MOSFET that features a drain-source breakdown voltage of 80V and a continuous drain current of 30A @ 25°C.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 30A @ 25°C
  • Package: TO-252-3
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 12A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 75nC @ 10V
  • Maximum Input Capacitance: 1700pF @ 25V
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
65+ $0.9013 $58.5845
160+ $0.7396 $118.3360
245+ $0.7165 $175.5425
335+ $0.6934 $232.2890
435+ $0.6703 $291.5805
580+ $0.6010 $348.5800
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