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Same model may have multiple batches, images only for reference.
IPD50N04S309ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD50N04S309ATMA1

Part No IPD50N04S309ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A TO252-3
Datasheet
IPD50N04S309ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 28μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045866-IPD50N04S309ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD50N04S309ATMA1 CAD Model

Description

The IPD50N04S309ATMA1 is an N-Channel MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 50A @ 25°C
  • Power Dissipation: 63W (Tc)
  • Mounting Technology: SMD (SMT)
  • Gate-Source Threshold Voltage: 4V @ 28μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Rds On: 9 mOhm @ 50A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: PG-TO252-3, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Not for new designs
  • Supply and Demand: Sufficient

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Quantity Unit Price Ext. Price
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140+ $0.8454 $118.3560
215+ $0.8189 $176.0635
295+ $0.7925 $233.7875
380+ $0.7662 $291.1560
505+ $0.6868 $346.8340
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