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IPD50N06S214ATMA2

Part No IPD50N06S214ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 50A TO252-31 / N-Channel 55 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1485 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number IPD50
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338128-IPD50N06S214ATMA2
Ultra Librarian 3D Model Ultra Librarian IPD50N06S214ATMA2 CAD Model

Description

The IPD50N06S214ATMA2 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Product: IPD50N06S214ATMA2
  • Channel Type: N-Channel MOSFET
  • Series: OptiMOS
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-to-Source Voltage: 55V
  • Power Dissipation: 136W (Tc)
  • Mounting Type: Surface Mount
  • Packaging: Tape and Reel
  • Gate Charge: 52 nC @ 10 V
  • Current: 50A (Tc) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1385 $62.6175
125+ $0.9342 $116.7750
195+ $0.9051 $176.4945
265+ $0.8759 $232.1135
345+ $0.8466 $292.0770
460+ $0.7591 $349.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,721 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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