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IPD50R399CPATMA1

Part No IPD50R399CPATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description LOW POWER_LEGACY
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CP
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 100 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD50R
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 461024-IPD50R399CPATMA1
Ultra Librarian 3D Model Ultra Librarian IPD50R399CPATMA1 CAD Model

Description

The IPD50R399CPATMA1 is a N-Channel MOSFET from Infineon Technologies.

  • Series: CoolMOS™ CP
  • Package: Tape & Reel
  • Standard Package Quantity: 2,500 pcs
  • Win Source Part Number: 461024
  • Drain to Source Voltage (Vdss): 500 V
  • Continuous Drain Current (Id): 9A @ 25°C
  • Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
  • Gate Charge (Qg): 23 nC @ 10V
  • Temperature Range: -55°C to 150°C
  • REACH: Unaffected
  • ECCN: EAR99
  • Status: Not For New Designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4414 $51.6210
36+ $2.8237 $101.6532
55+ $2.7354 $150.4470
76+ $2.6472 $201.1872
98+ $2.5590 $250.7820
131+ $2.2942 $300.5402
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,085 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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