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Same model may have multiple batches, images only for reference.
IPP65R380C6 Real Image
Same model may have multiple batches, images only for reference.

IPP65R380C6

Part No IPP65R380C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR, 1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 603667-IPP65R380C6
Ultra Librarian 3D Model Ultra Librarian IPP65R380C6 CAD Model

Description

The 603667-IPP65R380C6 is a CoolMOS™ N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10.6A @ 25°C
  • Maximum On-Resistance (Rds On): 380mOhm @ 3.2A, 10V
  • Power Dissipation: up to 83W
  • Mounting: through a hole
  • Package: TO-220-3
  • Gate Charge (Qg): 39nC @ 10V
  • Input Capacitance (Ciss): 710pF @ 100V
  • Operating Temperature Range: from -55°C to 150°C (TJ)
  • Manufacturer: Infineon Technologies
  • Status: Active
  • Drive Voltage: 10V

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