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Same model may have multiple batches, images only for reference.
HUF76013P Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF76013P

Part No HUF76013P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 20A TO-220AB
Datasheet
HUF76013P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 624pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 068306-HUF76013P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HUF76013P CAD Model

Description

The Fairchild/ON Semiconductor HUF76013P is a N-Channel MOSFET transistor that is designed for use in a wide range of applications.

  • Maximum Power Dissipation: 50W
  • Maximum Continuous Drain Current: 20A
  • Gate-Source Threshold Voltage: 3V
  • Maximum Input Capacitance: 624pF
  • Package: TO-220AB
  • Applications: Power supplies, motor control, lighting and audio amplifiers

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