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NVD3055L170T4G-VF01

Part No NVD3055L170T4G-VF01
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 9A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 275pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj)
Maximum Rds On at Id,Vgs 170 mOhm @ 4.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1084092-NVD3055L170T4G-VF01
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVD3055L170T4G-VF01 CAD Model

Description

ON Semiconductor NVD3055L170T4G-VF01 MOSFET

The NVD3055L170T4G-VF01 is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management solutions. This MOSFET is designed to meet a wide range of applications, offering a perfect balance between efficient power handling and compact form factor.

Key Features:

  • Low RDS(on): This device features a low on-state resistance, which reduces power loss and improves overall efficiency, making it ideal for power-intensive applications.
  • High Continuous Drain Current (ID): With a high continuous drain current of 17 A, the NVD3055L170T4G-VF01 is capable of handling significant power levels, suitable for high-performance circuits.
  • 170V Drain-to-Source Voltage (VDS): The MOSFET can withstand high voltage levels, providing a robust solution for applications that experience voltage spikes or require high voltage operations.
  • Low Gate Charge (Qg): A low gate charge ensures faster switching speeds, which is critical for high-frequency applications and reduces switching losses.
  • Enhanced Body Diode: Features an improved body diode performance, which can handle fast reverse recovery, beneficial in reducing noise and improving reliability during switching.
  • Surface Mount Package: Comes in a surface-mount package, which is designed for compact PCB layouts and is suitable for automated assembly processes.

Applications:

The NVD3055L170T4G-VF01 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Systems
  • Power Management Circuits
  • Automotive Applications
  • LED Lighting

Robust and Reliable:

ON Semiconductor's commitment to quality ensures that the NVD3055L170T4G-VF01 MOSFET is robust and reliable, making it a preferred choice for engineers and designers looking for a component that will deliver consistent performance over a long operational life. Whether you are designing power supplies or managing power in automotive electronics, this MOSFET will provide the efficiency and reliability your projects require.

For detailed specifications and application notes, visit the ON Semiconductor website to access comprehensive technical documentation and support for the NVD3055L170T4G-VF01.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2543 $50.8600
480+ $0.2087 $100.1760
745+ $0.2022 $150.6390
1,025+ $0.1957 $200.5925
1,325+ $0.1891 $250.5575
1,770+ $0.1696 $300.1920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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