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IPD530N15N3GBTMA1

Part No IPD530N15N3GBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 35μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 887pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 53 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001850-IPD530N15N3GBTMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD530N15N3GBTMA1 CAD Model

Description

The Infineon Technologies IPD530N15N3GBTMA1 is an N-channel MOSFET transistor that is designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 21A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 35μA
  • Maximum Gate Charge: 12nC @ 10V
  • Package: PG-TO252-3
  • Mounting: Surface-mount
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0769 $53.8450
115+ $0.8836 $101.6140
180+ $0.8560 $154.0800
245+ $0.8284 $202.9580
315+ $0.8008 $252.2520
420+ $0.7180 $301.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,860 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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