The IPD60R1K0CE is a CoolMOS™ power MOSFET from Infineon Technologies, designed for high-efficiency switched-mode power supplies (SMPS). It combines low on-resistance with fast switching performance, making it suitable for a wide range of power electronics applications.

Applications

• Switched-mode power supplies (SMPS)
• Power factor correction (PFC)
• DC-DC converters
• Lighting applications (e.g., LED drivers)
• Solar inverters

Features

• CoolMOS™ Technology: Superjunction MOSFET technology for low on-resistance and high voltage capability.
• Low On-Resistance (Rds(on)): Reduces conduction losses for improved efficiency.
• Fast Switching Speed: Reduces switching losses for higher efficiency and smaller form factor.
• Integrated Gate Resistor (Rg): Simplifies gate drive design and reduces external components.
• Robust Body Diode: Enables reliable operation in hard-switching topologies.
• Pb-Free and RoHS Compliant: Environmentally friendly design.

Benefits

• Increased Efficiency: Low on-resistance and fast switching speed minimize power losses.
• Simplified Design: Integrated gate resistor reduces external component count and simplifies gate drive design.
• Improved Reliability: Robust body diode ensures reliable operation in demanding applications.
• Reduced System Cost: High efficiency reduces the need for bulky heat sinks and other components.
• Environmentally Compliant: Meets environmental regulations.
• Enhanced Power Density: Higher efficiency allows for smaller and more compact power supply designs.

Additional Details

The IPD60R1K0CE is an N-channel MOSFET housed in a PG-TO252 package. It features a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of up to 5.9A (depending on operating conditions). The device's low on-resistance, typically around 1.0 Ω at Vgs = 10V, significantly reduces conduction losses. The integrated gate resistor simplifies gate drive design and reduces external component count. This MOSFET is designed to operate at high switching frequencies, contributing to smaller and more efficient power supply designs. The maximum operating junction temperature is 150°C. The robust body diode ensures reliable operation in hard-switching topologies, making it suitable for a wide range of power electronics applications.