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IPD60R380C6ATMA1

Part No IPD60R380C6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10.6A TO252-3  /  N-Channel 600 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C6
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD60R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPD60R380C6ATMA1TR,IPD60R380C6ATMA1DKR,SP001117716,IPD60R380C6ATMA1-ND,IPD60R380C6ATMA1CT
Standard Package 2,500
Win Source Part Number 1025491-IPD60R380C6ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD60R380C6ATMA1 CAD Model

Description

The IPD60R380C6ATMA1 is a CoolMOS™ C6 N-channel MOSFET type device that has a drain to source voltage of 150 V and a continuous drain current of 37A @ 25°C.

  • Rds On (Max): 10.5mOhm @ 37A, 10V
  • Vgs(th) (Max): 4V @ 160µA
  • Package: Tape and Reel
  • Standard Package: 2,500 units
  • REACH: Unaffected
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4604 $58.4160
100+ $1.1984 $119.8400
150+ $1.1609 $174.1350
210+ $1.1235 $235.9350
270+ $1.0859 $293.1930
360+ $0.9737 $350.5320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,860 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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