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IPD60R3K3C6

Part No IPD60R3K3C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
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Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 40μA
Max Gate Charge 4.6nC @ 10V
Max Input Capacitance 93pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 18.1W (Tc)
Maximum Rds On at Id,Vgs 3.3 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 068999-IPD60R3K3C6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IPD60R3K3C6
Introduction Date July 21, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPD60R3K3C6 CAD Model

Description

The Infineon Technologies MOSFET 068999-IPD60R3K3C6 is a high power N-channel polarity component that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.7A @ 25°C
  • Maximum Rds On: 3.3 Ohm @ 500mA, 10V
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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