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IPD65R380C6BTMA1

Part No IPD65R380C6BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10.6A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045885-IPD65R380C6BTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD65R380C6BTMA1 CAD Model

Description

The Infineon Technologies IPD65R380C6BTMA1 MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 650V, continuous drain current of 10.6A (Tc), and maximum Rds On of 380 mOhm @ 3.2A, 10V.

  • Power Dissipation: 83W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting: PG-TO252-3 package
  • Package Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 320μA

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