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IPD65R650CEATMA1

Part No IPD65R650CEATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10.1A TO252-3 / N-Channel 650 V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD65R
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1382311-IPD65R650CEATMA1
Ultra Librarian 3D Model Ultra Librarian IPD65R650CEATMA1 CAD Model

Description

The 1382311-IPD65R650CEATMA1 is a N-Channel MOSFET transistor from the CoolMOS™ series by Infineon Technologies.

  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10.1A @ 25°C
  • On-Resistance (Rds On): 650mOhm @ 2.1A and 10V
  • Gate Charge (Qg): 23nC @ 10V
  • Input Capacitance (Ciss): 440pF @ 100V
  • Operating Temperature Range: -40°C to 150°C
  • Mounting Type: Surface Mount
  • Package: TO-252-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2541 $50.8200
480+ $0.2085 $100.0800
745+ $0.2020 $150.4900
1,025+ $0.1955 $200.3875
1,325+ $0.1890 $250.4250
1,775+ $0.1694 $300.6850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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