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Same model may have multiple batches, images only for reference.
IPD80N06S3-09 Real Image
Same model may have multiple batches, images only for reference.

IPD80N06S3-09

Part No IPD80N06S3-09
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO252-3
Datasheet
IPD80N06S3-09 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 55μA
Max Gate Charge 88nC @ 10V
Max Input Capacitance 6100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045895-IPD80N06S3-09
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD80N06S3-09 CAD Model

Description

The Infineon Technologies 1045895-IPD80N06S3-09 is an N-Channel MOSFET transistor that has a drain-source breakdown voltage of 55V and a maximum continuous drain current of 80A.

  • Manufacturer: Infineon Technologies
  • Part Number: 1045895-IPD80N06S3-09
  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Continuous Drain Current: 80A
  • Maximum Power Dissipation: 107W
  • Application: discrete semiconductor products
  • Gate-Source Threshold Voltage @ 55μA: 4V
  • Maximum Gate Charge @ 10V: 88nC
  • Maximum Rds On @ Id, Vgs: 8.4 mOhm @ 40A and 10V
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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