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Same model may have multiple batches, images only for reference.
IPD80R1K4P7 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD80R1K4P7

Part No IPD80R1K4P7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 800V, 1.4OHM, N-CHANNEL MOSFET,
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
Power Dissipation (Max) 32W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-341
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 464 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 825992-IPD80R1K4P7
Ultra Librarian 3D Model Ultra Librarian IPD80R1K4P7 CAD Model

Description

The 825992-IPD80R1K4P7 is a CoolMOS™ MOSFET transistor designed for various applications.

  • Drain-to-source voltage: 800V
  • Continuous drain current: 4A
  • Rds On: 1.4Ohm @ 1.4A and 10V
  • Gate charge: 10nC @ 10V
  • Input capacitance: 250pF @ 500V
  • Package: TO-252-3, DPak
  • Suitable for: power electronic applications.

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95+ $1.2624 $119.9280
145+ $1.2229 $177.3205
200+ $1.1836 $236.7200
255+ $1.1441 $291.7455
340+ $1.0256 $348.7040
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