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Same model may have multiple batches, images only for reference.
IPD90N10S406ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD90N10S406ATMA1

Part No IPD90N10S406ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 90A TO252-3 / N-Channel 100 V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4870 pF @ 25 V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD90
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1382313-IPD90N10S406ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD90N10S406ATMA1 CAD Model

Description

The 1199449 is an automotive N-channel MOSFET transistor from the OptiMOS™ series by Infineon Technologies.

  • Drain-to-Source Voltage: 100V
  • Continuous Drain Current: 90A @ 25°C
  • On-Resistance: 6.7mOhm @ 90A and 10V gate-source voltage
  • Mounting: Surface Mountable
  • Package: TO-252-3, DPak
  • Gate Charge: 68nC @ 10V
  • Input Capacitance: 4870pF @ 25V
  • Temperature Range: -55°C to 175°C
  • Application: Automotive

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110+ $1.6229 $178.5190
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195+ $1.5181 $296.0295
255+ $1.3611 $347.0805
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