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Same model may have multiple batches, images only for reference.
IPDD60R125CFD7XTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPDD60R125CFD7XTMA1

Part No IPDD60R125CFD7XTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 27A HDSOP-10 / N-Channel 600 V 27A (Tc) 176W (Tc) Surface Mount PG-HDSOP-10-1
Datasheet
IPDD60R125CFD7XTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CFD7
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Rds On (Max) @ Id, Vgs 125mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1329 pF @ 400 V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-10-1
Package / Case 10-PowerSOP Module
Base Product Number IPDD60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1357349-IPDD60R125CFD7XTMA1
Ultra Librarian 3D Model Ultra Librarian IPDD60R125CFD7XTMA1 CAD Model

Description

The IPDD60R125CFD7XTMA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS CFD7
  • Drain-to-Source Voltage: 600V
  • Continuous Drain Current: 27A @ 25°C
  • On-Resistance: 125mOhm @ 6.8A and 10V
  • Gate Threshold Voltage: 4.5V @ 340µA
  • Gate Charge: 31nC @ 10V
  • Package: 10-PowerSOP module
  • Mounting Type: Surface Mount

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