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Same model may have multiple batches, images only for reference.
IPG20N06S3L-23 Real Image
Same model may have multiple batches, images only for reference.

IPG20N06S3L-23

Part No IPG20N06S3L-23
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS-T Power-Transistor
Datasheet
IPG20N06S3L-23 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel - TR
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Maximum) @ Id, Vgs 23 mOhm @ 16A, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 20μA
Gate Charge (Qg) (Maximum) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2950pF @ 25V
Power - Max 45W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package 8-PowerVDFN
Manufacturer Package PG-TDSON-8-4
Win Source Part Number 1186234-IPG20N06S3L-23
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name IPG20N06S3L-23
Introduction Date September 23, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IPG20N06S3L-23 CAD Model

Description

The Infineon Technologies IPG20N06S3L-23 is a 2 N-Channel (Dual) FET type transistor with a Logic Level Gate feature.

  • Continuous drain current: 20A
  • Maximum power: 45W
  • Maximum Rds On: 23 mOhm @ 16A, 10V
  • Drain-source voltage: 55V
  • Vgs(th) (Maximum) @ Id: 2.2V @ 20μA
  • Gate charge: 42nC @ 10V
  • Input capacitance: 2950pF @ 25V
  • Packaged in a PG-TDSON-8-4 package
  • Mounted in SMD
  • Classified as a Discrete Semiconductor Product
  • Part of the OptiMOS series
  • Operating temperature range: -55°C ~ 175°C (TJ)
  • Obsolete (EOL)
  • Limited supply and demand status

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