The IPG20N10S4L-35A is an OptiMOS™ power MOSFET from Infineon Technologies, specifically designed for high-efficiency power conversion applications. This N-channel MOSFET is characterized by its low on-state resistance (RDS(on)) and optimized for use in synchronous rectification and DC-DC converters. Its design focuses on minimizing power losses and improving overall system efficiency.

Applications

• Synchronous rectification in switched-mode power supplies (SMPS)
• DC-DC converters
• High-frequency power conversion
• OR-ing and hot-swap applications
• Motor control

Features

• Optimized for high-frequency switching
• Low on-state resistance (RDS(on))
• Avalanche rated
• Logic level compatibility
• 100% lead-free and RoHS compliant

Benefits

• Reduced power losses and improved efficiency due to the low RDS(on).
• Simplified gate drive requirements because of the logic-level compatibility, reducing complexity and cost.
• Enhanced system reliability and robustness with its avalanche ruggedness, providing protection against transient voltage spikes.
• Improved thermal performance, allowing for higher power density designs.

Additional Details

The IPG20N10S4L-35A features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 20A (depending on thermal conditions). Its low gate charge (Qg) helps reduce switching losses. This MOSFET is typically available in a PG-TO252-3 (DPAK) package, which facilitates efficient heat dissipation. It is designed for reliable operation across a broad temperature range, making it suitable for various demanding environments. The low RDS(on) ensures minimal conduction losses, contributing to improved system efficiency.