The Infineon Technologies IPI024N06N3GXKSA1 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a maximum continuous drain current of 120A @ 25°C.

• Manufacturer: Infineon Technologies
• Drain-Source Breakdown Voltage: 60V
• Maximum Continuous Drain Current @ 25°C: 120A
• Maximum Rds On: 2.4 mOhm @ 100A, 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 275nC @ 10V
• Maximum Input Capacitance: 23000pF @ 30V
• Product Category: discrete semiconductor products
• Power Dissipation: 250W (Tc)
• Package: PG-TO262-3
• Case: TO-262-3 Long Leads, I2Pak, TO-262AA