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Same model may have multiple batches, images only for reference.
IPI028N08N3 G Real Image
Same model may have multiple batches, images only for reference.

IPI028N08N3 G

Part No IPI028N08N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, N Ch, 100A, 80V, PG-TO262-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-262
Continuous Drain Current (ID) 100 A
Drain to Source Breakdown Voltage 80 V
Drain to Source Resistance 2.8 mΩ
Drain to Source Voltage (Vdss) 80 V
Element Configuration Single
Fall Time 33 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 14.2 nF
Maximum Operating Temperature 175 °C
Max Power Dissipation 300 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 300 W
Radiation Hardening No
Rds On Max 2.8 mΩ
REACH SVHC No SVHC
Rise Time 73 ns
RoHS Compliant
Threshold Voltage 2.8 V
Turn-Off Delay Time 86 ns
Turn-On Delay Time 28 ns
Win Source Part Number 994717-IPI028N08N3 G
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IPI028N08N3 G CAD Model

Description

The Infineon Technologies IPI028N08N3G is an RF MOSFET transistor that has a through-hole mount and comes in a TO-262 case/package.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 100A
  • Power Dissipation: 300W
  • Maximum Operating Temperature: 175°C
  • Minimum Operating Temperature: -55°C
  • RoHS: compliant
  • SVHC: no

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