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Same model may have multiple batches, images only for reference.
IPI034NE7N3G Real Image
Same model may have multiple batches, images only for reference.

IPI034NE7N3G

Part No IPI034NE7N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 8130 pF @ 37.5 V
Power Dissipation (Max) 214W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 242 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874795-IPI034NE7N3G
Ultra Librarian 3D Model Ultra Librarian IPI034NE7N3G CAD Model

Description

The Infineon Technologies IPI034NE7N3G is an N-channel MOSFET transistor from the OptiMOS™ series.

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • Vdss: 75V
  • Id @ 25°C: 100A
  • Rds On @ 100A and 10V: 3.4mOhm
  • Vgs(th) @ 155µA: 3.8V
  • Qg @ 10V: 117nC
  • Mounting Type: Through-hole
  • Package: TO-262-3 Long Leads, I²Pak
  • Temperature Range: -55°C to 175°C
  • Status: Active product

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