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Same model may have multiple batches, images only for reference.
IPI041N12N3GAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI041N12N3GAKSA1

Part No IPI041N12N3GAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 120A TO262-3 / Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
Datasheet
IPI041N12N3GAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 120V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 270μA
Gate Charge (Qg) (Maximum) @ Vgs 211nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 13800pF @ 60V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 4.1 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776874-IPI041N12N3GAKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPI041N12N3GAKSA1
Introduction Date July 16, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPI041N12N3GAKSA1 CAD Model

Description

The Infineon Technologies IPI041N12N3GAKSA1 is an OptiMOS MOSFET manufactured by Infineon Technologies.

  • Continuous Drain Current @ 25°C: 120A
  • Maximum Drain-Source Voltage: 120V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-262-3 long leads, I2Pak
  • Mounting: Through-hole
  • Introduction Date: July 16, 2009
  • Estimated EOL Date: 2027
  • ECCN: EAR99
  • Manufactured In: Malaysia
  • Supply and Demand Status: Limited

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