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Same model may have multiple batches, images only for reference.
IPI05CN10NG Real Image
Same model may have multiple batches, images only for reference.

IPI05CN10NG

Part No IPI05CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO262-3
Datasheet
IPI05CN10NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 181nC @ 10V
Max Input Capacitance 12000pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069010-IPI05CN10NG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI05CN10NG CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel semiconductor device that is designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Package: Tube/Rail
  • Mounting: Through Hole
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 100A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 181nC @ 10V
  • Maximum Input Capacitance: 12000pF @ 50V
  • Maximum Rds On @ Id,Vgs: 5.4 mOhm @ 100A, 10V
  • Supply and Demand Status: limited

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