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IPI076N12N3GAKSA1

Part No IPI076N12N3GAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 100A TO262-3 / Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 120V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 130μA
Gate Charge (Qg) (Maximum) @ Vgs 101nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6640pF @ 60V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 188W (Tc)
Rds On (Maximum) @ Id, Vgs 7.6 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776876-IPI076N12N3GAKSA1
Popularity Medium
Supply and Demand Status Balance
Family Name IPI076N12N3GAKSA1
Introduction Date July 09, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPI076N12N3GAKSA1 CAD Model

Description

The Infineon Technologies IPI076N12N3GAKSA1 is a MOSFET technology-based OptiMOS series device manufactured by Infineon Technologies.

  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting: Through Hole
  • Current-Continuous Drain: 100A (Tc)
  • Maximum Power Dissipation: 188W (Tc)
  • RoHS Compliant: Yes
  • Estimated EOL Date: 2027
  • Manufactured In: Malaysia
  • Halogen-Free: Yes

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