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IPI16CN10NG

Part No IPI16CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 53A TO262-3
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 61μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 3220pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 16.2 mOhm @ 53A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040640-IPI16CN10NG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI16CN10NG CAD Model

Description

The Infineon Technologies IPI16CN10NG is an N-channel MOSFET transistor that offers a maximum power dissipation of 100W (Tc).

  • Manufacturer: Infineon Technologies
  • Maximum Power Dissipation: 100W (Tc)
  • Product Category: discrete semiconductor products
  • Drive Voltage: 10V
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: PG-TO262-3
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 53A (Tc)
  • Maximum Gate Charge: 48nC @ 10V
  • Maximum Input Capacitance: 3220pF @ 50V
  • Maximum Rds On @ Id, Vgs: 16.2 mOhm @ 53A, 10V
  • Supply and Demand Status: limited

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