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IPI50R299CP

Part No IPI50R299CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 315 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603564-IPI50R299CP
Ultra Librarian 3D Model Ultra Librarian IPI50R299CP CAD Model

Description

The 603564-IPI50R299CP is a single N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 12A @ 25°C
  • Maximum On-Resistance (Rds On): 299mOhm @ 6.6A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 3.5V @ 440µA
  • Maximum Power Dissipation: 104W
  • Mounting Type: Through-Hole
  • Package: TO-262-3
  • Gate Charge (Qg): 31nC @ 10V
  • Input Capacitance (Ciss): 1190pF @ 100V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3682 $59.2050
60+ $1.9432 $116.5920
93+ $1.8826 $175.0818
127+ $1.8218 $231.3686
164+ $1.7611 $288.8204
220+ $1.5789 $347.3580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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