The Infineon Technologies 1045927-IPI50R299CPXKSA1 is a N-Channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 12A @ 25°C.

• Channel Type: N-Channel
• Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current: 12A @ 25°C
• Maximum Rds On: 299 mOhm @ 6.6A, 10V
• Power Dissipation: 104W (Tc)
• Maximum Gate-Source Voltage: ±20V
• Package: PG-TO262-3 with long leads, I2Pak, TO-262AA dimensions
• Gate-Source Threshold Voltage: 3.5V @ 440μA
• Max Gate Charge: 31nC @ 10V
• Maximum Input Capacitance: 1190pF @ 100V
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Suitable for: use in applications such as power supplies, motor control, and lighting