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IPI60R165CPAKSA1

Part No IPI60R165CPAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 21A TO-262 / Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-262 Tube
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 790μA
Gate Charge (Qg) (Maximum) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2000pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 192W (Tc)
Rds On (Maximum) @ Id, Vgs 165 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776882-IPI60R165CPAKSA1
Popularity Medium
Supply and Demand Status Balance
Family Name IPI60R165CPAKSA1
Introduction Date February 18, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IPI60R165CPAKSA1 CAD Model

Description

The Infineon Technologies IPI60R165CPAKSA1 is a CoolMOS MOSFET that is designed to deliver high performance in a TO-262-3 Long Leads, I2Pak, TO-262AA package.

  • Maximum Drain-Source Voltage: 650V
  • Continuous Drain Current: 21A (Tc)
  • Gate Charge (Qg): 52nC @ 10V
  • Input Capacitance (Ciss): 2000pF @ 100V
  • Rds On (Maximum) @ Id, Vgs: 165 mOhm @ 12A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Ideal For Use In: Discrete Semiconductor Products

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