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Same model may have multiple batches, images only for reference.
IPI60R250CP Real Image
Same model may have multiple batches, images only for reference.

IPI60R250CP

Part No IPI60R250CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description COOLMOS N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 176 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603571-IPI60R250CP
Ultra Librarian 3D Model Ultra Librarian IPI60R250CP CAD Model

Description

The 603571-IPI60R250CP is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ series
  • Vdss: 600V
  • Id @ 25°C: 12A
  • Rds On: 250mOhm @ 7.8A and 10V Vgs
  • Qg: 35nC @ 10V
  • Ciss: 1200pF @ 100V
  • Maximum Power Dissipation: 104W
  • Mounting: Through-hole
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Status: Active product
  • Description: widely used in the electronics industry for its excellent performance and reliability.

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