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IPI60R299CPXKSA1

Name: IPI60R299CPXKSA1
Brand: Infineon Technologies
SKU: 461089
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IPI60R299CPXKSA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 11A I2PAK
Datasheet	IPI60R299CPXKSA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	600V
Continuous Drain Current at 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	3.5V @ 440μA
Max Gate Charge	29nC @ 10V
Max Input Capacitance	1100pF @ 100V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	96W (Tc)
Maximum Rds On at Id,Vgs	299 mOhm @ 6.6A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO262-3
Dimension	TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number	1045935-IPI60R299CPXKSA1
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IPI60R299CPXKSA1 CAD Model

Alternative Products

Description

The Infineon Technologies IPI60R299CPXKSA1 is an N-Channel MOSFET transistor that comes in a PG-TO262-3 package.

Drain-Source Breakdown Voltage: 600V
Continuous Drain Current @ 25°C: 11A
Maximum Power Dissipation: 96W
Gate-Source Threshold Voltage: 3.5V @ 440μA
Maximum Gate Charge: 29nC @ 10V
Maximum Rds On: 299 mOhm @ 6.6A and 10V
Suitable for: Use in various applications such as power supplies and motor control circuits

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
35+	$1.9208	$67.2280
75+	$1.5766	$118.2450
115+	$1.5269	$175.5935
160+	$1.4784	$236.5440
205+	$1.4287	$292.8835
275+	$1.2809	$352.2475

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 32,700 pieces

MOQ: 35 pcs

Order Increment : 1 pcs

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