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Same model may have multiple batches, images only for reference.
IPI65R099C6 Real Image
Same model may have multiple batches, images only for reference.

IPI65R099C6

Part No IPI65R099C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 127 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 100 V
Power Dissipation (Max) 278W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603575-IPI65R099C6
Ultra Librarian 3D Model Ultra Librarian IPI65R099C6 CAD Model

Description

The CoolMOS™ 603575-IPI65R099C6 is a single N-channel MOSFET transistor designed for use in discrete semiconductor products. CoolMOS™ 603575-IPI65R099C6.

  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 38A
  • Rds On (Max): 99mOhm @ 12.8A and 10V
  • Package: TO-262-3
  • Gate Charge (Qg): 127nC @ 10V
  • Input Capacitance (Ciss): 2780pF @ 100V
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8914 $58.6968
29+ $4.0136 $116.3944
45+ $3.8889 $175.0005
62+ $3.7630 $233.3060
80+ $3.6371 $290.9680
107+ $3.2617 $349.0019
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Availability: 2,500 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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