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Same model may have multiple batches, images only for reference.
IPI65R280C6 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPI65R280C6

Part No IPI65R280C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.8A TO262
Datasheet
IPI65R280C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 950pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205229-IPI65R280C6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI65R280C6 CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor that can handle a maximum power dissipation of 104W at a temperature of 25°C.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 13.8A
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 4.4A, 10V
  • Package: PG-TO262-3 case
  • Operating Temperature Range: -55°C to 150°C
  • Application: Suitable for use in Discrete Semiconductor Products

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