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Same model may have multiple batches, images only for reference.
IPI65R280E6 Real Image
Same model may have multiple batches, images only for reference.

IPI65R280E6

Part No IPI65R280E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.8A TO262
Datasheet
IPI65R280E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 950pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205230-IPI65R280E6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI65R280E6 CAD Model

Description

The IPI65R280E6 is an N-Channel MOSFET manufactured by Infineon Technologies.

  • Application: used for discrete semiconductor products
  • Status: active in the market
  • Voltage Range: 2.5V to 10V
  • Maximum Power Dissipation: 104W
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 13.8A
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Maximum Input Capacitance: 950pF @ 100V
  • RoHS compliant: RoHS compliant
  • Lead-free: Lead-free

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.2610 $75.7830
6+ $20.7265 $124.3590
9+ $20.0797 $180.7173
12+ $19.4317 $233.1804
16+ $18.7838 $300.5408
21+ $16.8411 $353.6631
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,900 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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