The Infineon Technologies IPN60R3K4CEATMA1 is a N-channel Super Junction MOSFET designed for use in Discrete Semiconductor Products, particularly in Transistors - FETs, MOSFETs - Single.

• Package: PG-SOT223-3
• Drain to Source Voltage (Vdss): 600 V
• Continuous Drain Current (Id): 2.6A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 40μA
• Power Dissipation (Max): 5W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
• Temperature Range: -40°C ~ 150°C (TJ)
• ROHS3 Compliant: True