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IPN80R2K0P7

Part No IPN80R2K0P7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPN80R2K0 - 800V COOLMOS N-CHANN / N-Channel 800 V 3A (Tc) 6.4W (Tc) Surface Mount PG-SOT223-3-1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 500 V
Power Dissipation (Max) 6.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-3-1
Package / Case TO-261-3
Standard Package 1
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1339268-IPN80R2K0P7
Ultra Librarian 3D Model Ultra Librarian IPN80R2K0P7 CAD Model

Description

The IPN80R2K0P7 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Product Name: IPN80R2K0P7
  • Type: N-Channel MOSFET
  • Series: CoolMOS
  • Package: TO-261-3
  • Drain-to-Source Voltage: 800V
  • Power Dissipation: 6.4W (Tc)
  • Mounting Type: Surface Mount
  • Package Type: Bulk
  • Gate Charge: 9 nC @ 10 V
  • Current: 3A (Tc) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5865 $58.6500
240+ $0.4813 $115.5120
375+ $0.4663 $174.8625
515+ $0.4513 $232.4195
665+ $0.4361 $290.0065
890+ $0.3911 $348.0790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,621 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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