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Same model may have multiple batches, images only for reference.
IPP015N04NG Real Image
Same model may have multiple batches, images only for reference.

IPP015N04NG

Part No IPP015N04NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO220-3
Datasheet
IPP015N04NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 20000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 040643-IPP015N04NG
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP015N04NG CAD Model

Description

The Infineon Technologies IPP015N04NG is an N-Channel MOSFET designed for discrete semiconductor products.

  • Maximum Power Dissipation: 250W (Tc)
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Popularity: Popular in the market with high demand
  • Supply and Demand Status: Balanced
  • Product Status: Active in the market
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5468 $58.5764
56+ $2.0894 $117.0064
86+ $2.0247 $174.1242
118+ $1.9589 $231.1502
153+ $1.8942 $289.8126
205+ $1.6979 $348.0695
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,100 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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