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IPP024N06N3GXKSA1

Part No IPP024N06N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 196μA
Max Gate Charge 275nC @ 10V
Max Input Capacitance 23000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 133468-IPP024N06N3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP024N06N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP024N06N3GXKSA1 is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 250W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 196μA
  • Maximum Gate Charge: 275nC @ 10V
  • Maximum Rds On @ Id,Vgs: 2.4 mOhm @ 100A, 10V
  • Popularity: Medium popularity
  • Package: PG-TO-220-3 package
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6868 $59.1096
53+ $2.2046 $116.8438
82+ $2.1357 $175.1274
112+ $2.0668 $231.4816
145+ $1.9979 $289.6955
194+ $1.7912 $347.4928
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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