The Infineon Technologies 1005912-IPP029N06NAKSA1 is a single N-channel MOSFET transistor from the OptiMOS™ series.

• Package: TO-220-3
• Maximum Power Dissipation: 3 W (Ta) and 136 W (Tc)
• Maximum Continuous Drain Current @ 25°C: 24 A (Ta) and 100 A (Tc)
• Maximum Drain to Source Voltage: 60 V
• Maximum Rds On: 2.9 mOhm @ 100A, 10V
• Gate Charge (Qg): 56 nC @ 10 V
• Input Capacitance (Ciss): 4100 pF @ 30 V
• Gate-Source Voltage (Vgs): ±20V
• Operating Temperature Range: -55°C to 175°C (TJ)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V