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Same model may have multiple batches, images only for reference.
IPP030N10N3GXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP030N10N3GXKSA1

Part No IPP030N10N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO220-3
Datasheet
IPP030N10N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 275μA
Max Gate Charge 206nC @ 10V
Max Input Capacitance 14800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 122710-IPP030N10N3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP030N10N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP030N10N3GXKSA1 is a MOSFET transistor with N-channel polarity, designed for discrete semiconductor applications.

  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Supply and Demand Status: Limited
  • Package: PG-TO-220-3 case
  • Maximum Continuous Drain Current: 100A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4298 $51.0258
51+ $1.9937 $101.6787
78+ $1.9314 $150.6492
108+ $1.8691 $201.8628
139+ $1.8068 $251.1452
186+ $1.6199 $301.3014
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 810 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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