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IPP048N04NGXKSA1

Part No IPP048N04NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 70A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045954-IPP048N04NGXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP048N04NGXKSA1 CAD Model

Description

The Infineon Technologies IPP048N04NGXKSA1 is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 70A @ 25°C
  • Maximum Rds On: 4.8 mOhm @ 70A and 10V
  • Gate-Source Threshold Voltage: 4V @ 200μA
  • Maximum Gate Charge: 41nC @ 10V
  • Maximum Input Capacitance: 3300pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO-220-3
  • Mounting: Through Hole
  • Power Dissipation: 79W (Tc)
  • Applications: Automotive, computers & computer peripherals, communications & networking, consumer electronics, lighting, sensing & instrumentation, and industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6548 $52.3840
190+ $0.5373 $102.0870
290+ $0.5205 $150.9450
400+ $0.5037 $201.4800
515+ $0.4869 $250.7535
690+ $0.4366 $301.2540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 377 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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