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IPP04CN10NGXKSA1

Part No IPP04CN10NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MV POWER MOS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series *
Manufacturer Homepage www.infineon.com
Win Source Part Number 746252-IPP04CN10NGXKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP04CN10N
Introduction Date August 29, 2007
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2021
Ultra Librarian 3D Model Ultra Librarian IPP04CN10NGXKSA1 CAD Model

Description

The IPP04CN10NGXKSA1, manufactured by Infineon Technologies, is a high-performance OptiMOS™ power MOSFET designed for demanding power conversion applications. This device is part of Infineon's extensive portfolio of power semiconductors known for their efficiency, reliability, and robust performance. The IPP04CN10NGXKSA1 is specifically optimized to minimize conduction and switching losses, making it ideal for use in synchronous rectification, DC-DC converters, and motor control systems.

Applications

  • Synchronous Rectification in AC-DC and DC-DC converters
  • DC-DC converters for server and telecom power supplies
  • Motor control applications in industrial drives
  • Battery management systems (BMS)
  • Uninterruptible Power Supplies (UPS)
  • LED lighting applications

Features

  • Optimized for high-frequency switching
  • Very low on-resistance RDS(on) for reduced conduction losses
  • Low gate charge Qg for efficient switching
  • Avalanche rated for robust operation
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
  • Available in a PG-TO220 package

Benefits

  • Increased efficiency in power conversion systems
  • Reduced power dissipation and improved thermal performance
  • Higher power density due to minimized losses
  • Enhanced system reliability and robustness
  • Simplified thermal management
  • Optimized for high-frequency operation
  • Environmentally friendly due to Pb-free and RoHS compliance

Additional Details

The IPP04CN10NGXKSA1 power MOSFET features Infineon's advanced OptiMOS™ technology, which is designed to minimize on-resistance and gate charge, resulting in reduced conduction and switching losses. The low on-resistance (RDS(on)) significantly reduces power dissipation, allowing for higher efficiency and improved thermal performance. The low gate charge (Qg) enables efficient switching, further reducing losses and improving overall system performance. The device is avalanche rated and 100% avalanche tested, ensuring robust operation and protection against voltage transients.

The IPP04CN10NGXKSA1 is designed to meet the demanding requirements of modern power electronic systems, offering a combination of high efficiency, reliability, and performance. Its features and benefits make it an excellent choice for engineers designing power supplies, motor drives, and other power conversion systems where energy efficiency and robustness are critical factors. The PG-TO220 package provides excellent thermal performance and ease of mounting, further simplifying the design process.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4239 $53.0868
28+ $3.6299 $101.6372
43+ $3.5165 $151.2095
59+ $3.4030 $200.7770
76+ $3.2896 $250.0096
102+ $2.9493 $300.8286
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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