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Same model may have multiple batches, images only for reference.
IPP05CN10NG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP05CN10NG

Part No IPP05CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO-220
Datasheet
IPP05CN10NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 181nC @ 10V
Max Input Capacitance 12000pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069037-IPP05CN10NG
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP05CN10NG CAD Model

Description

The Infineon Technologies MOSFET is a N-channel power MOSFET that is designed for use in various electronic applications.

  • Maximum Power Dissipation: 300W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Rds On: 5.4 mOhm @ 100A and 10V
  • Package: PG-TO-220-3 case
  • Mounting: through hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 12000pF @ 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,800 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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