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Same model may have multiple batches, images only for reference.
IPP05CN10NGXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP05CN10NGXKSA1

Part No IPP05CN10NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO-220
Datasheet
IPP05CN10NGXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 181nC @ 10V
Max Input Capacitance 12000pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 134929-IPP05CN10NGXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP05CN10NGXKSA1 CAD Model

Description

The Infineon Technologies 134929-IPP05CN10NGXKSA1 is a N-channel MOSFET with through-hole mounting technology.

  • Operating Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 300W (Tc)
  • Package: PG-TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 181nC @ 10V
  • Maximum Input Capacitance: 12000pF @ 50V
  • Maximum Rds On at Id,Vgs: 5.4 mOhm @ 100A, 10V
  • Supply and Demand Status: limited

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90+ $1.3167 $118.5030
140+ $1.2763 $178.6820
190+ $1.2347 $234.5930
245+ $1.1943 $292.6035
325+ $1.0707 $347.9775
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