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Same model may have multiple batches, images only for reference.
IPP05N03LA Real Image
Same model may have multiple batches, images only for reference.

IPP05N03LA

Part No IPP05N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 80A TO-220AB
Datasheet
IPP05N03LA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 3110pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 005110-IPP05N03LA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP05N03LA CAD Model

Description

The IPP05N03LA is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 94W(Tc)
  • Continuous Drain Current at 25°C: 80A(Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 4.9 mOhm @ 55A, 10V
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Input Capacitance: 3110pF @ 15V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0915 $60.0325
130+ $0.8963 $116.5190
200+ $0.8686 $173.7200
280+ $0.8397 $235.1160
360+ $0.8120 $292.3200
480+ $0.7277 $349.2960
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Availability: 8,400 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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